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35V center-terminated push/pull I/O • JEDEC-standard ball-out • Low-profile package • TC of 0°C to 95°C – 0°C to 85°C: 8192 refresh cycles in 64ms – 85°C to 95°C: 8192 refresh cycles in 32ms – Industrial temperature (IT) available
Advanced Compression Technology
Microchip Technology 4/8-Bit Parallel-Input Latched Drivers
5) n Minimum Output Current: 20mA n No Output Capacitor Required n Reverse Battery Protection n Minimum Input/Output Differential: 0
Micron Technology DRAM , Part #:MT44K32M36RB-093E:A TR | Dynamic random access memory | DEX pci interface ic 35V center-terminated push/pull I/O •Micron Technology DRAM RLDRAM3, Part #: MT44K32M36RB 093E: A TR features: 1200 MHz DDR operation (2400 Mb s ball data rate) 86. 4Gb s peak bandwidth (x36 at 1200 MHz clock frequency) Organization 64 Meg x 18, and 32 Meg x 36 common I O (CIO) 16 banks 1. 2V center terminated push pull I O 2. 5V VEXT, 1. 35V VDD, 1. 2V VDDQ (optional 1. 35V VDDQ for 2400 operation only). Reduced cycle time (t RC (MIN) = 6. 67 8ns) SDR addressing Programmable READ WRITE